Tuesday, November 18, 2008

Samsung Developed Flash Memory Chips with the Technology of 30 Nanometers

Learned from foreign media, the global titan of Flash Memory, Samsung Electronic Company announced on Tuesday that they have developed Flash Memory chips with 30 nanometers technology. This is the first NAND Flash Memory chip with the capacity of 64 GB. Samsung Electronic Company indicates that they took the advantage of most advanced 30 nanometers semiconductor technology. During the production process of ordinary Flash Memory, Samsung Electronic Company applies the 50 nanometers technology. 

Samsung Electronic Company said in one statement that 64 GB products mean the Flash Memory industry has strode across a big step in the aspect of capacity. High capacity Flash Memory will meet the ever-increasing requirements of consuming electronic products to storage medium. Samsung Electronic Company believes that they pioneered the invention of 64 GB Flash Memory chip in the whole world. The birth of it will make the capacity become double in Flash Memory in the continuous 8 years, it will also improve the manufacturing technology of chips in the continuous 7 years. Samsung Electronic Company said they will produce this kind of chips in a large scale. 

It is well known that Flash Memory can still preserve data after the power off, it enjoys high stability and low consumption compared with hard disk. It is widely used in all kinds of consuming products such as music player, cell phone and digital camera. Many companies have already developed  Flash Memory hybrid hard disk which can be used in computer. It is generally believed within the industry that with the continuous decline of the price of Flash Memory, the future hard disk would be replaced by Flash Memory gradually. It should be noted that when Samsung Electronic Company developed 32 GB Flash Memory chips last year, they applied 40 nanometers semiconductor technology. The speaker of Samsung said that they would produce 32 GB Flash Memory chips in a large scale next year.

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